MAGNETIC MEMORY ELEMENT

摘要

PROBLEM TO BE SOLVED: To secure a sufficient thermal disturbance constant even when a magnetic layer is minimized.SOLUTION: A magnetic memory element 10 comprises: a memory layer 12 having magnetic anisotropy in a direction perpendicular to a film surface and in which the magnetization direction is variable; a reference layer 14 having magnetic anisotropy in a direction perpendicular to the film surface and in which the magnetization direction is not variable; and a tunnel barrier layer 13 interposed between the memory layer 12 and the reference layer 14. The memory layer 12 is made from cobalt (Co) and iron (Fe). A plurality of oxygen atoms are present on both interfaces of the memory layer 12.