发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device comprises: a plurality of on-die termination circuits connected to each of a plurality of input/output pads; and a control circuit for controlling the on-die termination circuit. The on-die termination circuit comprises: a pull-up element connected between a first terminal and an output terminal; and a pull-down element connected between the output terminal and a second terminal. The pull-up element is driven by a first pull-up element driver, and the pull-down element is driven by a first pull-down element driver. The control circuit activates a plurality of the on-die termination circuits at different timings.
申请公布号 US2014286110(A1) 申请公布日期 2014.09.25
申请号 US201314019811 申请日期 2013.09.06
申请人 Kabushiki Kaisha Toshiba 发明人 SHIMIZU Yuui;Suematsu Yasuhiro
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
主权项 1. A semiconductor memory device, comprising: a memory device configured having memory cells arranged therein; a data output buffer for outputting data read from the memory device, and a data input buffer for receiving data to be written to the memory device; a plurality of input/output pads to which the data input buffer and the data output buffer for inputting/outputting the data are respectively connected; a plurality of on-die termination circuits each connected to any one of the plurality of input/output pads; and a control circuit operative to control the on-die termination circuits, the plurality of on-die termination circuits each comprising: a pull-up element connected between a first terminal and an output terminal; and a pull-down element connected between the output terminal and a second terminal, the pull-up element being driven by a first pull-up element driver, the pull-down element being driven by a first pull-down element driver, and the control circuit being operative to activate a plurality of the on-die termination circuits at different timings.
地址 Minato-ku JP