发明名称 |
MICROWAVE HEAT TREATMENT METHOD |
摘要 |
The present disclosure relates to a heat treatment method of performing a single crystallization of amorphous silicon formed on a substrate to be processed by irradiating the substrate with a microwave. The heat treatment method includes: irradiating the substrate with a microwave to increase a temperature of the substrate to a first temperature such that the amorphous silicon formed on the substrate becomes a single crystal at an interface between the substrate and the amorphous silicon and a nucleation does not occur in a region except the interface; irradiating the substrate with a microwave to heat the substrate at the first temperature for a predetermined period; irradiating the substrate with the microwave to increase the first temperature to a second temperature, which is higher than the first temperature; and irradiating the substrate with the microwave to heat the substrate at the second temperature. |
申请公布号 |
US2014283734(A1) |
申请公布日期 |
2014.09.25 |
申请号 |
US201414223547 |
申请日期 |
2014.03.24 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MONDEN Taichi;KITAGAWA Junichi;HONG Seokhyoung;KABE Yoshiro |
分类号 |
C30B1/02;C30B30/00 |
主分类号 |
C30B1/02 |
代理机构 |
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代理人 |
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主权项 |
1. A heat treatment method of performing a single crystallization of an amorphous silicon formed on a substrate to be processed by irradiating the substrate with a microwave, the method comprising:
irradiating the substrate with a microwave to increase a temperature of the substrate to a first temperature such that the amorphous silicon formed on the substrate becomes a single crystal at an interface between the substrate and the amorphous silicon and a nucleation does not occur in a region except the interface; irradiating the substrate with a microwave to heat the substrate at the first temperature for a predetermined period; irradiating the substrate with the microwave to increase the first temperature to a second temperature, which is higher than the first temperature; and irradiating the substrate with the microwave to heat the substrate at the second temperature. |
地址 |
Tokyo JP |