NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

A transfer transistor includes a pair of first diffusion regions and a gate electrode layer. The pair of first diffusion regions are formed in a surface of a semiconductor substrate, and are each connected to a contact. The gate electrode layer is formed on the semiconductor substrate via a gate insulating layer and has a pair of openings each surrounding the contact.

主权项

1. A nonvolatile semiconductor memory device, comprising:
a memory cell array configured as an arrangement of memory cells, each memory cell holding data in a nonvolatile manner; and a transfer transistor configured to transfer a certain voltage to a gate of the memory cell, the transfer transistor comprising: a pair of first diffusion regions formed in a surface of a semiconductor substrate, and each connected to a contact; and a gate electrode layer formed on the semiconductor substrate via a gate insulating layer and having a pair of openings each surrounding the contact.