| 发明名称 |
Method and Substrate for Thick III-N Epitaxy |
| 摘要 |
A method of manufacturing an III-N substrate includes bonding a Si substrate to a support substrate, the Si substrate having a (111) growth surface facing away from the support substrate, thinning the Si substrate at the (111) growth surface to a thickness of 100 μm or less, and forming III-N material on the (111) growth surface of the Si substrate after the Si substrate is thinned. The support substrate has a coefficient of thermal expansion more closely matched to that of the III-N material than the Si substrate. Other methods of manufacturing an III-N substrate are disclosed, as well as the corresponding wafer structures. |
| 申请公布号 |
US2014284609(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201313849864 |
申请日期 |
2013.03.25 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Vielemeyer Martin |
| 分类号 |
H01L21/02;H01L29/267 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing an III-N substrate, the method comprising:
bonding a Si substrate to a support substrate, the Si substrate having a (111) growth surface facing away from the support substrate; thinning the Si substrate at the (111) growth surface to a thickness of 100 μm or less; and forming III-N material on the (111) growth surface of the Si substrate after the Si substrate is thinned, wherein the support substrate has a coefficient of thermal expansion more closely matched to that of the III-N material than the Si substrate. |
| 地址 |
Villach AT |
