| 摘要 |
PROBLEM TO BE SOLVED: To provide a &bgr;-GaO-based single crystal substrate for growing a Ga-containing oxide layer capable of heightening the quality of the Ga-containing oxide layer formed on the &bgr;-GaO-based single crystal substrate.SOLUTION: A &bgr;-GaO-based single crystal substrate for growing a Ga-containing oxide layer comprises a &bgr;-GaO-based single crystal, and has its (010) plane or a plane tilted in the angle range within 37.5° with respect to the (010) plane as a principal plane. |
