| 发明名称 |
RUTHENIUM FILM FORMATION METHOD AND STORAGE MEDIUM |
| 摘要 |
A ruthenium film formation method including: forming a ruthenium oxide film on a substrate; and reducing the ruthenium oxide film into a ruthenium film, wherein the reducing the ruthenium oxide film comprises at least supplying a ruthenium compound gas containing hydrogen as a reducing agent. |
| 申请公布号 |
US2014287585(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201414219141 |
申请日期 |
2014.03.19 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
ASHIZAWA Hiroaki;IWAI Takaaki |
| 分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A ruthenium film formation method, comprising:
forming a ruthenium oxide film on a substrate; and reducing the ruthenium oxide film into a ruthenium film, wherein the reducing the ruthenium oxide film comprises at least supplying a ruthenium compound gas containing hydrogen as a reducing agent. |
| 地址 |
Tokyo JP |
