| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
According to one embodiment, a semiconductor device includes a first wiring, a second wiring disposed in the same layer as the first wiring, a first via connected to a bottom surface of the first wiring and formed of a carbon nanotube, and a second via connected to a bottom surface of the second wiring and formed of a metal. |
| 申请公布号 |
US2014284814(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201313958093 |
申请日期 |
2013.08.02 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAITO Tatsuro;WADA Makoto;ISOBAYASHI Atsunobu;KAJITA Akihiro |
| 分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first wiring; a second wiring disposed in the same layer as the first wiring; a first via connected to a bottom surface of the first wiring and formed of a carbon nanotube; and a second via connected to a bottom surface of the second wiring and formed of a metal. |
| 地址 |
Tokyo JP |
