| 主权项 |
1. A semiconductor apparatus comprising:
a drain region of a first conductivity type; a drain electrode electrically coupled to the drain region; a semiconductor layer of the first conductivity type formed onto the drain region, the semiconductor layer having a first impurity concentration; a source region of the first conductivity type formed on the semiconductor layer, the source region having a second impurity concentration greater than the first impurity concentration; a first source electrode electrically coupled to the source region; a gate electrode formed via an insulating layer, the gate electrode having one end and another end, the one end being in a depth of the source region, and the other end being in a depth of the semiconductor layer or the drain region; and a second source electrode provided in the semiconductor layer under the gate electrodes via an insulating layer, the second source electrode being electrically coupled to the first source electrode, wherein a second spacing in between a plurality of the second source electrodes is configured larger than a first spacing in between a plurality of the gate electrodes. |
