发明名称 WAFER PROCESSING METHOD AND WAFER PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To efficiently replace an environment inside of a housing with a low-humidity environment at a low flow rate of dry gas to be supplied when shifting from a liquid processing step to a drying step.SOLUTION: Until a first time point (t1) after the lapse of a predetermined time from start of a liquid processing step, first cleaning gas is supplied into an area at an upper side of a cup body (30) in an internal space of a housing (60). At the first time point, gas to be supplied is switched from the first cleaning gas to second cleaning gas of which either the humidity or the oxygen concentration is lower than that of the first cleaning gas. Within a first period from the first time point to a second time point (t2) in which a liquid film covering a surface of a wafer (W) disappears at least in a portion of the surface of the wafer and the portion starts being exposed in a drying step, an operation state of a second gas supply part (78) is changed in such a manner that a flow mode of the second cleaning gas formed within the internal space of the housing is changed at least once.
申请公布号 JP2014179525(A) 申请公布日期 2014.09.25
申请号 JP20130053618 申请日期 2013.03.15
申请人 TOKYO ELECTRON LTD 发明人 ITO KIKO
分类号 H01L21/304 主分类号 H01L21/304
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