MICROWAVE PLASMA APPARATUS AND METHOD FOR MATERIALS PROCESSING

摘要

A microwave plasma apparatus for processing a material includes a plasma chamber, a microwave radiation source, and a waveguide guiding microwave radiation from the microwave radiation source to the plasma chamber. A process gas flows through the plasma chamber and the microwave radiation couples to the process gas to produce a plasma jet. A process material is introduced to the plasma chamber, becomes entrained in the plasma jet, and is thereby transformed to a stream of product material droplets or particles. The product material droplets or particles are substantially more uniform in size, velocity, temperature, and melt state than are droplets or particles produced by prior devices.

主权项

1. A microwave plasma apparatus for processing a material, comprising:
a plasma chamber; a microwave radiation source for generating microwave radiation; a waveguide guiding the microwave radiation from the microwave radiation source to the plasma chamber; a gas supply in fluid communication with the plasma chamber for providing a gas to the plasma chamber; and a material feeding system in communication with the plasma chamber for introducing a process material to the plasma chamber, the material feeding system comprising:
an emitter wire comprising the process material and protruding into the plasma chamber;a gas injector that imparts to the gas a velocity into the chamber and substantially along a surface of the emitter wire; andmeans for advancing the emitter wire into the plasma chamber; wherein the microwave radiation couples to the gas to form a plasma jet; wherein the emitter wire is advanced into the chamber such that the plasma jet comes into contact with the advancing emitter wire and erodes a portion of the advancing emitter wire; and wherein the process material, through contact with the plasma jet, forms a product material.