| 发明名称 |
METHOD OF MANUFACTURING METAL SILICIDE LAYER |
| 摘要 |
According to one embodiment, a method of manufacturing a metal silicide layer, the method includes forming a metal layer including impurities on a silicon layer by a vapor deposition method using a gas of a metal and a gas of the impurities, and forming a metal silicide layer including the impurities by chemically reacting the metal layer with the silicon layer. A thickness and a composition of the metal silicide layer are controlled by an amount of the impurities in the metal layer. |
| 申请公布号 |
US2014287582(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201314019813 |
申请日期 |
2013.09.06 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HONDA Makoto |
| 分类号 |
H01L21/285 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a metal silicide layer, the method comprising:
forming a metal layer including impurities on a silicon layer by a vapor deposition method using a gas of a metal and a gas of the impurities; and forming a metal silicide layer including the impurities by chemically reacting the metal layer with the silicon layer, wherein a thickness and a composition of the metal silicide layer are controlled by an amount of the impurities in the metal layer. |
| 地址 |
Tokyo JP |
