METHOD FOR FORMING CONDUCTIVE STRUCTURE, AND PLATING APPARATUS AND PLATING METHOD

摘要

A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior surfaces of via holes, of a substrate having the via holes formed in the surface; forming a resist pattern at a predetermined position on the conductive film; carrying out first electroplating under first plating conditions, using the conductive film as a feeding layer, thereby filling a first plated film into the via holes; and carrying out second electroplating under second plating conditions, using the conductive film and the first plated film as a feeding layer, thereby allowing a second plated film to grow on the conductive film and the first plated film, both exposed in the resist openings of the resist pattern.

主权项

1. A method for forming a conductive structure having via plugs for use in three-dimensional packaging, comprising:
preparing a substrate having upwardly-open via holes, a conductive film formed on an entire surface of the substrate, including interior surfaces of the via holes, and a resist pattern formed at a predetermined position on the conductive film; carrying out first electroplating under first plating conditions, using the conductive film as a feeding layer, so as to fill the via holes with a first plated film to form the via plugs, the first electroplating including immersing the substrate in a first plating solution containing an additive for suppressing plating growth to suppress the plating growth at entrances to the via holes, an electric current in the first plating conditions is one of a constant current, a stepwise current, or a pulse current; and after filling the via holes with the first plated film, carrying out second electroplating under second plating conditions, using the conductive film and the first plated film as a feeding layer, by immersing the substrate in a second plating solution so as to grow a second plated film on the first plated film and on a portion of the conductive film exposed in resist openings of the resist pattern to thereby fill the via holes and resist openings without defects, an average current value in the second plating conditions being higher than an average current value in the first plating conditions.