| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a first electrode formed on a substrate, the first electrode being a first electrical potential; and a second electrode formed on the first electrode, the second electrode including a signal wiring that transmits a signal and a planar electrode part with a prescribed area. A shape of the first electrode corresponding to the planar electrode part is made into a slit shape such that a longitudinal direction of a slit is parallel to a direction in which the signal proceeds in the planar electrode part. |
| 申请公布号 |
US2014284804(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201414172020 |
申请日期 |
2014.02.04 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
Suzuki Toshihide;Sato Masaru |
| 分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first electrode formed on a substrate, the first electrode being a first electrical potential; and a second electrode formed on the first electrode, the second electrode including a signal wiring configured to transmit a signal and a planar electrode part with a prescribed area, wherein a shape of the first electrode corresponding to the planar electrode part is made into a slit shape such that a longitudinal direction of a slit is parallel to a direction in which the signal proceeds in the planar electrode part. |
| 地址 |
Kawasaki-shi JP |
