SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a first semiconductor layer, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer, a first electrode which extends in a first direction and is surrounded by the first semiconductor layer except at one end thereof, and a first insulation film which is formed between the first semiconductor layer and the first electrode. A film thickness of the first insulation film between the other end of the first electrode in a second direction opposite to the first direction and the first semiconductor layer includes a thickness that is greater than a thickness of the first insulation film along a side surface of the first electrode. The semiconductor device also includes a second electrode which faces the second semiconductor layer, and a second insulation film which is formed between the second electrode and the second semiconductor layer.

主权项

1. A semiconductor device comprising:
a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer; a first electrode extending in a first direction toward the second semiconductor layer away from the first semiconductor layer and which is surrounded by the first semiconductor layer except at one end thereof; and a first insulation film which is formed between the first semiconductor layer and the first electrode, the first insulation film having a film thickness at the other end of the first electrode that is greater than a thickness along a side surface thereof as the first insulation film approaches the one end of the first electrode; a second electrode which is formed on the end of the first insulation film in the first direction and faces the second semiconductor layer; a second insulation film which is formed between the second electrode and the second semiconductor layer and has a thickness that is less than the thickness of the first insulation film; and a third insulation film formed between the first electrode and the second electrode.