发明名称 THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, ARRAY SUBSTRATE AND DISPLAY DEVICE
摘要 A thin-film transistor and a preparation method therefor, an array substrate and a display device, which belong to the technical field of thin-film transistors, can solve the problems of low ON-state current and unstable performance of existing thin-film transistors. The thin-film transistor of the present invention comprises: a source electrode (3), a drain electrode (4), a semiconductor layer (1), a gate electrode (2) and a gate insulation layer (21), and also comprises: a source electrode conducting layer (31) and a drain electrode conducting layer (41) which are arranged on the surface of the semiconductor layer and separated from each other, wherein the source electrode conducting layer is connected to the source electrode, and the drain electrode conducting layer is connected to the drain electrode; and the smallest distance between the source electrode conducting layer and the drain electrode conducting layer is less than the smallest distance between the source electrode and the drain electrode. The preparation method for the thin-film transistor comprises the step of forming the source electrode conducting layer and the drain electrode conducting layer. The array substrate and the display device comprise the above-mentioned thin-film transistor. The above-mentioned thin-film transistor can be used in the display device, particularly in a liquid crystal display device and in an organic light emitting diode display device.
申请公布号 WO2014146363(A1) 申请公布日期 2014.09.25
申请号 WO2013CN77590 申请日期 2013.06.20
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 CHEN, HAIJING;WANG, DONGFANG;JIANG, CHUNSHENG
分类号 H01L21/336;H01L29/786 主分类号 H01L21/336
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