发明名称 |
MULTILAYER PASSIVATION OR ETCH STOP TFT |
摘要 |
<p>The present invention generally relates to TFTs and methods for fabricating TFTs. For either back channel etch TFTs or for etch stop TFTs, multiple layers for the passivation layer or the etch stop layers permits a very dense capping layer to be formed over a less dense back channel protection layer. The capping layer can be sufficiently dense so that few pin holes are present and thus, hydrogen may not pass through to the semiconductor layer. As such, hydrogen containing precursors may be used for the capping layer deposition.</p> |
申请公布号 |
WO2014149682(A1) |
申请公布日期 |
2014.09.25 |
申请号 |
WO2014US20286 |
申请日期 |
2014.03.04 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YIM, DONG-KIL;WON, TAE KYUNG;CHO, SEON-MEE;WHITE, JOHN M. |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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