| 摘要 |
<p>[Problem] To correct a change in the Vgs-Id characteristics when the pMOS transistor and the nMOS transistor are energized for a long period of time, by using a metal film that acts as a light-blocking layer or a reflective layer. [Resolving Means] A display device that includes a plurality of pixels and a CMOS circuit, wherein a pMOS transistor on the CMOS circuit includes a first light-blocking layer and a gate electrode on opposing sides of a semiconductor layer, and an nMOS transistor of the CMOS circuit includes a second light-blocking layer and a gate electrode on opposing sides of a semiconductor layer; the first light-blocking layer and the second light-blocking layer composed of a conductive layer to which a predetermined voltage is inputted, include a first component for adjusting the Vgs-Id characteristics of the pMOS transistor by controlling a voltage value inputted to the first light-blocking layer, where Id is a drain current, and Vgs is an inter-gate source voltage; and a second component for adjusting the Vgs-Id characteristics of the nMOS transistor by controlling the voltage value inputted to the second light-blocking layer.</p> |
