发明名称 METHODS FOR PRODUCING INTERCONNECTS IN SEMICONDUCTOR DEVICES
摘要 A method for producing interconnects on a workpiece includes the following steps: preparing a substrate having a feature as a workpiece; depositing a conductive layer in the feature to fill the feature in part or in whole; depositing a copper fill to completely fill the feature if the feature is partially filled with the conductive layer; applying a copper overburden; thermally treating the workpiece; and removing the overburden to expose the substrate and the metalized feature.
申请公布号 KR20140113611(A) 申请公布日期 2014.09.24
申请号 KR20140031320 申请日期 2014.03.17
申请人 APPLIED MATERIALS, INC. 发明人 EMESH ISMAIL T.;SHAVIV ROEY;NAIK MEHUL
分类号 H01L21/203;H01L21/304;H01L21/324 主分类号 H01L21/203
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