| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive resist composition and a pattern forming method using the positive resist composition excellent in performance of a profile shape, pattern collapse and exposure latitude even in forming a fine pattern of 100 nm or less in patterning by normal exposure (dry exposure), and also excellent in patterning by liquid immersion exposure.SOLUTION: A positive resist composition and a pattern forming method using the positive resist composition contain: (a) resin in which solubility for alkali developing solution increases by action of acid, (B) a compound which generates the acid by irradiation of active rays or radiation rays; and (c) an amine compound comprising structure with an ester bond bonded to a nitrogen atom. |
