发明名称 Method for silk screen printing onto a conductor made of two superposed layers
摘要 <p>The method involves producing a set of test-patterns (5a-5d) on a surface (4) of a wafer (1) i.e. semiconductor wafer, and printing another set of test-patterns (6a-6d) that is distinct from the former set of test-patterns, during printing on the surface of the wafer by screen-printing. Actual distances (Ea-Ed) obtained on the surface of the wafer, between the corresponding test-patterns are measured. Each actual distance is compared with a theoretical distance so as to deduce the offset of a screen-printing screen. Independent claims are also included for the following: (1) a method for fabricating a photovoltaic cell (2) a screen printing device comprising an inspection unit constituted of a high-resolution camera and a computer.</p>
申请公布号 EP2239142(B1) 申请公布日期 2014.09.24
申请号 EP20100158466 申请日期 2010.03.30
申请人 COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES 发明人 BETTINELLI, ARMAND
分类号 H05K3/12;B41F15/08;B41F15/12;B41F33/00;B41M1/12;B41M3/00;H01L31/0224;H05K1/02;H05K3/00;H05K3/24 主分类号 H05K3/12
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