| 摘要 |
The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device, according to the present invention, comprises: a magnetization fixed layer including a first magnetic layer, a second magnetic layer, and a non-magnetic layer interposed between the first magnetic layer and the second magnetic layer; a magnetization free layer spaced apart from the magnetization fixed layer; a tunnel barrier layer interposed between the magnetization fixed layer and the magnetization free layer; and a magnetic spacer in contact with at least a portion of the side of the first magnetic layer and the side of the second magnetic layer. According to the present invention, by forming a magnetic spacer in contact with the magnetization fixed layer of the variable resistance element and not in contact with the magnetization free layer, the exchange coupling of the magnetization fixed layer can be strengthened and leakage magnetic field from the magnetization fixed layer can be prevented from influencing the magnetization free layer. Accordingly, the magnetic resistance characteristics of the variable resistance element can be improved. |
