| 摘要 |
A semiconductor device having reduced thickness, an electronic device using the same, and a manufacturing method thereof are provided to make thickness of a semiconductor device thin by including faced cell bit lines and a peripheral gate pattern on a top of a substrate. A semiconductor device comprises a semiconductor substrate(500), a first transistor(AT1), a second transistor(AT2), and a conductive pattern(539a). The semiconductor substrate has a first active region(503a) and a second active region(503b). The first transistor corresponds to the first active region, and has a first dopant region on the first active region and a first gate pattern(524) on the first active region. The second transistor corresponds to the second active region, and has a second dopant region on the second active region and a second gate pattern(540) on the second active region. The conductive pattern is arranged on the first transistor. A part of the conductive pattern is arranged to a level identical to a part of the second gate pattern. |
