发明名称 |
WRITE DRIVER CIRCUIT AND METHOD FOR WRITING TO A SPIN-TORQUE MRAM |
摘要 |
A method of applying a write current to a magnetic tunnel junction device minimizes sub-threshold leakage. NMOS- and PMOS-follower circuits are used in applying the write current, and bias signals for the follower circuits are isolated from global bias signals before the write current is applied. |
申请公布号 |
EP2780911(A1) |
申请公布日期 |
2014.09.24 |
申请号 |
EP20120849762 |
申请日期 |
2012.11.19 |
申请人 |
EVERSPIN TECHNOLOGIES, INC. |
发明人 |
ALAM, SYED M.;ANDRE, THOMAS |
分类号 |
G11C7/00;G11C11/16 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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