| 摘要 |
According to the embodiment of the present invention, an LDMOS device includes the following parts: a drift region; a source region and a drain region separated with a constant distance in the drift region; a field insulating layer formed in the drift region between the source region and the drain region; a first P-TOP region formed on the lower end of the field insulating layer, gate polysilicon which covers a part of the field insulating layer, a gate electrode formed on the upper part of the gate polysilicon; and a contact line which penetrates the gate electrode, the gate polysilicon, and the field insulating layer. |
