| 摘要 |
Here, at least one technique or system for ion implantation is provided. A pressure control module maintains a practically constant pressure in an ion implantation or process chamber. The pressure is maintained based on properties such as a space charge effect related to an implantation layer, pressure data, feedback, photoresist (PR) outgassing, PR coating rate, and an implantation layer. Effects related to the PR outgassing are reduced by maintaining the pressure inside the process chamber, thereby reducing the neutralization of ions. More excellent control with regard to the implantation of ions is achieved by maintaining charged ions, thereby implanting ions up to a desired depth. |
