| 摘要 |
MOS structures that exhibit lower contact resistance and methods for fabricating such MOS structures are provided. In one method, a semiconductor substrate is provided and a gate stack is fabricated on the semiconductor substrate. An impurity-doped region within the semiconductor substrate aligned with the gate stack is formed. Adjacent contact fins extending from the impurity-doped region are fabricated and a metal silicide layer is formed on the contact fins. A contact to at least a portion of the metal silicide layer on at least one of the contact fins is fabricated. |
