| 摘要 |
Such processing steps that perform an annealing process on amorphous silicon to form polysilicon use the exposure of pulsed line beams provided by laser diodes or the arrangement of the laser diodes. Laser beams from each laser diode are formed based on an optical beam. They are transmitted to a substrate. The selected cycle rates of the laser diodes are less than about 0.2 and greater than the cycle rates which can be used for continuous wave operation. An amorphous silicon layer on a rigid or flexible substrate is processed to generate a polysilicon layer with the mobility of at least 50 cm2/Vs. |
