| 摘要 |
The present invention relates to a process for producing a layer of a crystalline material, which process comprises disposing on a substrate: a first precursor compound comprising a first cation and a sacrificial anion, which first cation is a metal or metalloid cation and which sacrificial anion comprises two or more atoms; and a second precursor compound comprising a second anion and a second cation, which second cation can together with the sacrificial anion form a first volatile compound. The invention also relates to a layer of a crystalline material obtainable by a process according to the invention. The invention also provides a process for producing a semiconductor device comprising a process for producing a layer of a crystalline material according to the invention. The invention also provides a composition comprising: (a) a solvent; (b) NH4X; (c) AX; and (d) BY2 or MY4; wherein X, A, M and Y are as defined herein. |
