发明名称 METHOD FOR MANUFACTURING A NANO WIRE
摘要 The present invention is able to improve efficiency in nanowire manufacture by providing a manufacturing method for improving the growth of a nanowire from a metal silicide. A nanowire manufacturing method of the present invention comprises: a step of preparing a substrate; a step of forming a metal layer on the substrate; a step of applying Si precursors to a laminate; and a step of growing a nanowire at a temperature of 300-400°C and a pressure of 10-60 Torr.
申请公布号 KR20140112836(A) 申请公布日期 2014.09.24
申请号 KR20130027429 申请日期 2013.03.14
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, KUNSAN NATIONAL UNIVERSITY 发明人 KIM, JOON DONG
分类号 B82B3/00;C01B33/06 主分类号 B82B3/00
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