发明名称 |
METHOD FOR MANUFACTURING A NANO WIRE |
摘要 |
The present invention is able to improve efficiency in nanowire manufacture by providing a manufacturing method for improving the growth of a nanowire from a metal silicide. A nanowire manufacturing method of the present invention comprises: a step of preparing a substrate; a step of forming a metal layer on the substrate; a step of applying Si precursors to a laminate; and a step of growing a nanowire at a temperature of 300-400°C and a pressure of 10-60 Torr. |
申请公布号 |
KR20140112836(A) |
申请公布日期 |
2014.09.24 |
申请号 |
KR20130027429 |
申请日期 |
2013.03.14 |
申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, KUNSAN NATIONAL UNIVERSITY |
发明人 |
KIM, JOON DONG |
分类号 |
B82B3/00;C01B33/06 |
主分类号 |
B82B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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