| 摘要 |
<p>In a general aspect, a device can include a first conductivity type semiconductor layer having a top-side surface. The device can also include a second conductivity type well region, wherein the second conductivity type is opposite to the first conductivity type. The well region may be disposed in an upper portion of the semiconductor layer. The decvice can further include a gate trench disposed in the semiconductor layer. The gate trench is extended through the well region. A drain contact is partially disposed on the top-side surface of the semiconductor layer and may be adjacent to the well region. The device can still further include an isolation trench disposed between the drain contact and the gate trench in the semiconductor layer. The isolation trench is extended through the well region.</p> |
