THE FABRICATION METHOD OF BONDING METAL AND THE FABRICATION METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME

摘要

The present invention includes a method for forming a metal bonding layer that includes the steps of: forming a first bonding metal layer and a second bonding metal layer on one sides of a first object to be bonded and a second object to be bonded; arranging the second object to be bonded on the first object to be bonded in order for the first bonding metal layer and the second bonding metal layer to be in contact with each other; and forming an eutectic metal bonding layer by reacting the first bonding metal layer and the second bonding metal layer. At least one of the first bonding metal layer and the second bonding metal layer are formed to include a reaction delaying layer, which is made of metal or alloy for delaying the reaction between the first bonding metal layer and the second bonding metal layer.