| 发明名称 |
FORMING METHOD OF SEMICONDUCTOR CIRCUIT |
| 摘要 |
<p>The present invention relates to a method for forming a semiconductor circuit. The forming method of the present invention comprises: receiving a target layout; performing an optical proximity correction process on the target layout by considering a top loss of an etch mask layer; and performing a patterning process by using the optical proximity corrected layout.</p> |
| 申请公布号 |
KR20140113243(A) |
申请公布日期 |
2014.09.24 |
| 申请号 |
KR20130050713 |
申请日期 |
2013.05.06 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHANG, SANG YIL;HAN GENG;LI WAI KIN |
| 分类号 |
H01L21/027;G03F1/36 |
主分类号 |
H01L21/027 |
| 代理机构 |
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