| 摘要 |
A microlithographic projection exposure apparatus (10) comprises a primary illumination system (12) producing projection light, a projection objective (20; 120) and a correction optical system. The latter comprises a secondary illumination system (30; 130), which produces an intensity distribution of correction light in a reference surface (48; 148), and a correction element (32; 132) which includes a heating material and is arranged in a plane (38; 174) being at least substantially optically conjugate to the reference surface (48; 148) such that the correction light and the projection light pass through at least one lens contained in the projection objective (20; 120) before they impinge on the correction element (32; 132). All lenses (34; L1 to L5) through which both the correction light and the projection light pass are made of a lens material which has a lower coefficient of absorption for the correction light than the heating material contained in the correction element. |
