| 摘要 |
The present invention relates to a semiconductor light emitting display, a manufacturing apparatus thereof, and a manufacturing method thereof and, more particularly, to a semiconductor light emitting display, a manufacturing apparatus thereof, and a manufacturing method thereof, capable of obtaining a uniform film by solving the non-uniformity of a composition without an additional thermal process by forming a metal nanowire layer on the upper side of a P-GaN layer through a brush coating method and forming a transparent electrode layer on the metal nanowire layer through a sputtering method, improving an electrical property by normally performing ohmic junction, reducing manufacturing costs by simplifying a manufacturing process by removing the additional thermal process, and performing rapid manufacture and mass-production. |
