| 摘要 |
A method of manufacturing the semiconductor device is provided to prevent the Fermi level fixing phenomenon generated in the interface between the gate metal layer and the gate insulating layer by using the high pressure oxygen heat treatment. The high dielectric insulating layer is formed on the substrate. The AlNx layer or the interfacial layer consisting of the Al2O3 layer is formed on the high dielectric insulating layer. The rapid thermal processing is performed on the high dielectric insulating layer and interfacial layer. The gate metal layer is formed on the high dielectric insulating layer. The high pressure oxygen thermal process is performed on the high dielectric insulating layer and gate metal layer In the diluted oxygen atmosphere. The temperature of the high pressure oxygen heat treatment is 150°C or 600°C. The thermal processing annealing time is 5 minutes or 180 minutes. |
