FINFETS WITH REGROWN SOURCE/DRAIN AND METHODS FOR FORMING THE SAME

摘要

A method comprises a step for etching a semiconductor substrate for forming a recess on the substrate, and a step for having a surface layer of the semiconductor substrate react so as to create a reaction layer. The surface layer of the semiconductor substrate is inside the recess. Subsequently, the reaction layer is removed. Epitaxy is performed to grow a semiconductor material in the recess.