发明名称 |
Semiconductor device having seal wiring |
摘要 |
A semiconductor device includes: an interlayer insulating film formed on a substrate; a wiring formed in the interlayer insulating film in a chip region of the substrate; a seal ring formed in the interlayer insulating film in a periphery of the chip region and continuously surrounding the chip region; and a first protective film formed on the interlayer insulating film having the wiring and the seal ring formed therein. A first opening is formed in the first protective film in a region located outside the seal ring when viewed from the chip region, and the interlayer insulating film is exposed in the first opening. |
申请公布号 |
US8841753(B2) |
申请公布日期 |
2014.09.23 |
申请号 |
US201213428992 |
申请日期 |
2012.03.23 |
申请人 |
Panasonic Corporation |
发明人 |
Takemura Koji;Hirano Hiroshige;Itoh Yutaka;Sano Hikari;Koike Koji |
分类号 |
H01L23/544 |
主分类号 |
H01L23/544 |
代理机构 |
McDermott Will & Emery LLP |
代理人 |
McDermott Will & Emery LLP |
主权项 |
1. A semiconductor device comprising:
an interlayer insulating film formed on a substrate; a first seal wiring formed in the interlayer insulating film in a periphery of a chip region; a first protective film formed on the interlayer insulating film having the first seal wiring formed therein; a cap layer formed on the first protective film over the first seal wiring; a second protective film formed on the first protective film; a groove formed in a part of the interlayer insulating film located outside the first seal wiring when viewed from the chip region; a first opening formed in the first protective film such that the groove is directly below the first opening; a second opening formed in the first protective film having a part of the cap layer provided therein to be in contact with the first seal wiring; a third opening formed in the second protective film, wherein: the groove and the cap layer are provided in the third opening. |
地址 |
Osaka JP |