Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device

摘要

A back-illuminated type solid-state image pickup device (1041) includes read circuits (Tr1, Tr2) formed on one surface of a semiconductor substrate (1042) to read a signal from a photo-electric conversion element (PD) formed on the semiconductor substrate (1042), in which electric charges (e) generated in a photo-electric conversion region (1052c1) formed under at least one portion of the read circuits (Tr1, Tr2) are collected to an electric charge accumulation region (1052a) formed on one surface side of the semiconductor substrate (1042) of the photo-electric conversion element (PD) by electric field formed within the photo-electric conversion element (PD). Thus, the solid-state image pickup device and the camera are able to make the size of pixel become very small without lowering a saturation electric charge amount (Qs) and sensitivity.

主权项

1. A solid-state image pickup device comprising:
an interlayer insulator between a semiconductor layer of a first conductivity type and a supporting substrate, an electrically-conductive bump protruding from a surface of the supporting substrate; a copper wire extending through the supporting substrate and into the interlayer insulator, the copper wire terminating within the interlayer insulator; an electrically-conductive buried wire within the interlayer insulator, the copper wire touching the electrically-conductive bump and the electrically-conductive buried wire; a semiconductor region of a second conductivity type within the semiconductor layer, the second conductivity type being opposite to the first conductivity type.