发明名称 Capacitive pressure sensing semiconductor device
摘要 A capacitive pressure sensing semiconductor device is provided, which has pressure resistance against pressure applied by a pressing member and can detect the pressure surely and efficiently. The pressure sensing semiconductor device includes a pressure detecting part, which detects pressure as a change in capacitance, and a package that receives the pressure detecting part within. The pressure detecting part includes a first electrode and a second electrode disposed to oppose the first electrode, with a determined distance therebetween. Capacitance is formed between the first electrode and the second electrode, and changes according to a change in said distance caused by pressure transmitted to the first electrode by a pressing member. The package also includes a pressure transmitting member that transmits, to the first electrode of the pressure detecting part, the pressure applied by the pressing member.
申请公布号 US8841735(B2) 申请公布日期 2014.09.23
申请号 US201213728699 申请日期 2012.12.27
申请人 Wacom Co., Ltd. 发明人 Horie Toshihiko;Takiguchi Hidetaka
分类号 H01L29/84;G01L9/12;G01L9/00;G01L1/14 主分类号 H01L29/84
代理机构 Seed Law Group PLLC 代理人 Seed Law Group PLLC
主权项 1. A capacitive pressure sensing semiconductor device for use in a position indicator having an elongate core body including a distal end and a proximal end, the capacitive pressure sensing semiconductor device being configured to sense pressure applied to the distal end of the core body and comprising: a pressure detecting part that detects the pressure as a change in capacitance; a package in which the pressure detecting part is sealed; wherein the pressure detecting part includes a first electrode and a second electrode disposed to oppose the first electrode, with a determined distance between the first and second electrodes, and capacitance is formed between the first electrode and the second electrode and changes according to a change in said distance that is caused by the pressure transmitted to the first electrode via the proximal end from the distal end of the core body, and the capacitive pressure sensing semiconductor device further comprising a pressure transmitting member, disposed in the package, which is configured to receive, via the proximal end of the core body, the pressure applied to the distal end of the core body and to transmit the pressure to the first electrode of the pressure detecting part.
地址 Saitama JP