| 发明名称 |
Apparatus and techniques for controlling ion angular spread |
| 摘要 |
An electrostatic scanner to scan an ion beam in an ion implanter. The electrostatic scanner may include a first scan plate having a first inner surface that faces the ion beam, the first inner surface having a concave shape in a first plane that is perpendicular to a direction of propagation of the ion beam, and a second scan plate opposite the first scan plate separated by a gap to accept the ion beam the second scan plate having a second inner surface that faces the ion beam and a convex shape in the first plane, the first scan plate and second scan plate configured to generate an electrostatic field in the gap to scan the ion beam back and forth along a horizontal direction perpendicular to the direction of propagation of the ion beam. |
| 申请公布号 |
US8841631(B1) |
申请公布日期 |
2014.09.23 |
| 申请号 |
US201414221866 |
申请日期 |
2014.03.21 |
| 申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Sinclair Frank;Olson Joseph C.;Bell Edward W.;Feldman Danielle |
| 分类号 |
H01J37/16;H01J37/153;H01J37/30;H01J37/317;H01J37/147 |
主分类号 |
H01J37/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electrostatic scanner to scan an ion beam in an ion implanter, comprising:
a first scan plate having a first inner surface that faces the ion beam, the first inner surface having a concave shape in a first plane that is perpendicular to a direction of propagation of the ion beam; and a second scan plate opposite the first scan plate separated by a gap to accept the ion beam the second scan plate having a second inner surface that faces the ion beam and a convex shape in the first plane, the first scan plate and second scan plate configured to generate an electrostatic field in the gap to scan the ion beam back and forth along a horizontal direction perpendicular to the direction of propagation of the ion beam. |
| 地址 |
Gloucester MA US |
