发明名称 Method for fabricating thin film pattern having an organic pattern, liquid crystal display panel and method for fabricating thereof using the same
摘要 A method of fabricating a thin film pattern according to an embodiment of the present invention comprises forming an organic material pattern on a substrate, forming a metal material of liquid phase on a substrate provided with the organic material pattern, hardening the metal material of liquid phase, and removing the metal material located on the organic material pattern, allowing some metal material to be left at an area non-overlapped with the organic material pattern.
申请公布号 US8842245(B2) 申请公布日期 2014.09.23
申请号 US200912570536 申请日期 2009.09.30
申请人 LG Display Co., Ltd. 发明人 Song Kye Chan;Kim Kang Il
分类号 G02F1/1333;G02F1/1343;G02F1/136;G02F1/13;H01L51/00;H01L51/10;H01L51/05 主分类号 G02F1/1333
代理机构 Brinks Gilson & Lione 代理人 Brinks Gilson & Lione
主权项 1. A liquid crystal display panel comprising: a gate pattern that includes a gate line and a gate electrode connected to the gate line on a substrate; an organic gate insulating film disposed on the substrate provided with the gate pattern; a data line that crosses the gate line with the organic gate insulating film disposed therebetween; a thin film transistor provided at a crossing of the data line and the gate line; a pixel electrode connected to the thin film transistor; a storage capacitor disposed at an overlapping area of the pixel electrode and a pre-stage gate line; and an organic material pattern disposed between the substrate and the organic gate insulating film, and provided at an area other than the gate pattern, wherein the gate pattern is a metal material of liquid phase hardened by a dry process, wherein the organic material pattern is formed of one of an acrylic group organic compound, BCB and PFCB, wherein a thickness of the organic material pattern is thicker than a thickness of the gate pattern, and wherein no part of the gate pattern is covered by the organic material pattern, and wherein the organic material pattern has a side surface extending along a thickness direction of the organic material pattern and a part of the side surface of the organic material pattern is directly contacted with the organic gate insulating film.
地址 Seoul KR