发明名称 Transistor structure and driving circuit structure
摘要 A transistor structure disposed on a substrate includes a gate electrode, a gate insulating layer overlapping the gate electrode, a channel layer overlapping the gate electrode, and a plurality of first electrodes and a plurality of second electrodes overlapping the gate electrode. The gate insulating layer is disposed between the channel layer and the gate electrode. Besides, the gate insulating layer is located among the first electrodes, the second electrodes, and the gate electrode. The first electrodes and the second electrodes are alternately arranged along a first direction. Each of the first electrodes has a first width along the first direction. Each of the second electrodes has a second width along the first direction. A ratio of the first width to the second width ranges from 2 to 20. A driving circuit structure having the transistor structure is also provided.
申请公布号 US8841667(B2) 申请公布日期 2014.09.23
申请号 US201213565796 申请日期 2012.08.03
申请人 Au Optronics Corporation 发明人 Chang Jyu-Yu;Lai Chun-Wei;Shen Po-Yuan;Lee Wen-Jung;Tai Chih-Wei
分类号 H01L29/04 主分类号 H01L29/04
代理机构 Jianq Chyun IP Office 代理人 Jianq Chyun IP Office
主权项 1. A transistor structure disposed on a substrate, the transistor structure comprising: a gate electrode; a gate insulating layer overlapping the gate electrode; a channel layer overlapping the gate electrode, the gate insulating layer being located between the channel layer and the gate electrode; a first connection line overlapping the gate electrode, the first connection line being arranged along a first direction, the gate insulating layer being located between the first connection line and the gate electrode; a plurality of first electrodes and a plurality of second electrodes, the first and second electrodes overlapping the gate electrode, the gate insulating layer being located among the first electrodes, the second electrodes, and the gate electrode, the first electrodes being located at two sides of the first connection and the first connection line being located between a part of the first electrodes and another part of the first electrodes, the second electrodes being located at two sides of the first connection line and the first connection line being located between a part of the second electrodes and another part of the second electrodes, the first and second electrodes being alternately arranged along the first direction at the two sides of the first connection, the first electrodes being electrically connected to the first connection line, wherein each of the first electrodes has a first width along the first direction, each of the second electrodes has a second width along the first direction, and a ratio of the first width to the second width ranges from 2 to 20; and a second connection line arranged along the first direction and electrically connected to the second electrodes.
地址 Hsinchu TW