Vertical trench IGBT and method for manufacturing the same

摘要

A method for manufacturing a vertical trench IGBT includes: forming a body layer of a second conductivity type on a semiconductor substrate of a first conductivity type; forming a trench passing through the body layer; forming a trench gate in the trench via a gate insulating film; forming a polysilicon film containing an impurity of a first conductivity type on the body layer; diffusing the impurity from the polysilicon film into the body layer to form an emitter layer of a first conductivity type on the body layer; and forming a collector layer of a second conductivity type on a lower surface of the semiconductor substrate.

主权项

1. A method for manufacturing a vertical trench IGBT comprising:
forming a body layer of a second conductivity type on a semiconductor substrate of a first conductivity type; forming a trench passing through the body layer; forming a trench gate in the trench via a gate insulating film; forming a substantially planar polysilicon film containing an impurity of a first conductivity type on the body layer; diffusing the impurity from the polysilicon film into the body layer to form an emitter layer of a first conductivity type on the body layer; and forming a collector layer of a second conductivity type on a lower surface of the semiconductor substrate, wherein the emitter layer includes a true emitter layer formed in the vicinity of the trench gate, and an exterior emitter layer for extruding the true emitter layer.