| 摘要 |
PURPOSE: A plasma reactor, a plasma processing method using the same, and a semiconductor device manufactured by the same are provided to uniformly generate plasma with a large area using a plurality of capacitively coupled electrodes. CONSTITUTION: A reactor body forms a plasma discharge space. A capacitively coupled electrode assembly(30) forms one side of the plasma discharge space. The capacitively coupled electrode assembly generates plasma in the plasma discharge space. The capacitively coupled electrode assembly includes a common electrode(31) with a plurality of trench regions and a plurality of division electrodes(33) installed on the trench regions. The plasma is generated to surround the division electrode on the trench region. A plasma controller is installed on the capacitively coupled electrode assembly and provides electrical energy or magnetic energy. |
