发明名称 Systems and methods for implementing magnetoelectric junctions
摘要 Embodiments of the invention implement DIOMEJ cells. In one embodiment, a DIOMEJ cell includes: an MEJ that includes, a ferromagnetic fixed layer, a ferromagnetic free layer, and a dielectric layer interposed between said fixed and free layers, where the fixed layer is magnetically polarized in a first direction, where the free layer has a first easy axis that is aligned with the first direction, and where the MEJ is configured such that when a potential difference is applied across it, the magnetic anisotropy of the free layer is altered such that the relative strength of the magnetic anisotropy along a second easy axis that is orthogonal to the first easy axis, as compared to the strength of the magnetic anisotropy along the first easy axis, is magnified for the duration of the application of the potential difference; and a diode, where the diode and the MEJ are arranged in series.
申请公布号 US8841739(B2) 申请公布日期 2014.09.23
申请号 US201314021916 申请日期 2013.09.09
申请人 The Regents of the University of California 发明人 Khalili Amiri Pedram;Wang Kang L.
分类号 H01L29/82;H01L27/22 主分类号 H01L29/82
代理机构 代理人 O'Banion John P.;Wadhwani Rishi H.
主权项 1. A DIOMEJ cell comprising: a magnetoelectric junction, that itself comprises: a ferromagnetic fixed layer;a ferromagnetic, magnetically anisotropic, free layer; anda dielectric layer interposed between said ferromagnetic fixed layer and ferromagnetic, magnetically anisotropic, free layer;wherein the ferromagnetic fixed layer is magnetically polarized in a first direction;wherein the ferromagnetic, magnetically anisotropic, free layer has a first easy axis that is substantially aligned with the first direction, such that the ferromagnetic, magnetically anisotropic, free layer can adopt a magnetic polarity that is either parallel with or antiparallel with the first direction; andwherein the magnetoelectric junction is configured such that when a potential difference is applied across the magnetoelectric junction, the magnetic anisotropy of the ferromagnetic, magnetically anisotropic, free layer is altered such that the relative strength of the magnetic anisotropy along a second easy axis that is orthogonal to the first easy axis, or the easy plane where there is no easy axis that is orthogonal to the first easy axis, as compared to the strength of the magnetic anisotropy along the first easy axis, is magnified or reduced for the duration of the application of the potential difference; and a diode; wherein the diode and the magnetoelectric junction are arranged in series.
地址 Oakland CA US