Semiconductor device and method of manufacturing the same

摘要

In one embodiment, a semiconductor device includes a first diffusion layer of a first conductivity type and a second diffusion layer of a second conductivity type that are provided in a semiconductor layer at a distance, the second conductivity type being an opposite conductivity type of the first conductivity type, a first insulating film and a second insulating film that are provided on the semiconductor layer between the first diffusion layer and the second diffusion layer at a distance, a gate electrode provided on the first insulating film, and a threshold regulating electrode provided on the second insulating film.

主权项

1. A semiconductor device comprising:
a first diffusion layer of a first conductivity type and a second diffusion layer of a second conductivity type that are provided in a semiconductor layer at a distance, the second conductivity type being an opposite conductivity type of the first conductivity type; a first insulating film and a second insulating film that are provided on the semiconductor layer between the first diffusion layer and the second diffusion layer at a distance; a gate electrode provided on the first insulating film; and a threshold regulating electrode provided on the second insulating film; wherein an extension region of the first conductivity type is provided adjacent to the first diffusion layer; and wherein a pocket region of the second conductivity type is provided adjacent to the first diffusion layer on a surface of the semiconductor layer, and the extension region covers at least a part of the pocket region.