JFET device and method of manufacturing the same

摘要

A disclosed semiconductor device includes a semiconductor deposition layer formed over an insulation structure and above a substrate. The device includes a gate formed over a contact region between first and second implant regions in the semiconductor deposition layer. The first and second implant regions both have a first conductivity type, and the gate has a second conductivity type. The device may further include a second gate formed beneath the semiconductor deposition layer.

主权项

1. A semiconductor device comprising:
a substrate; a field oxide structure formed over the substrate; a semiconductor deposition layer formed over the field oxide structure and above the substrate, the semiconductor deposition layer having a first conductivity type; a first implant region formed in the semiconductor deposition layer, the first implant region having the first conductivity type and having a heavier doping concentration than the semiconductor deposition layer; a second implant region formed in the semiconductor deposition layer, the second implant region having the first conductivity type and having a heavier doping concentration than the semiconductor deposition layer; and a metal contact layer formed on a contact region of the semiconductor deposition layer between the first and second implant regions, whereby a junction forms between the metal layer and the contact region of the semiconductor deposition layer, wherein the junction is a Schottky barrier.