Memory element and method for manufacturing the same, and semiconductor device

摘要

The memory element has a structure at least including a first conductive layer, a second conductive layer, and a memory layer disposed between the first conductive layer and the second conductive layer. The memory layer is formed by a droplet discharge method using nanoparticles of a conductive material each of which is coated with an organic thin film. Specifically, a composition in which nanoparticles of a conductive material each of which is coated with an organic thin film are dispersed in a solvent is discharged (ejected) as ink droplets, and the solvent is dried to be vaporized to form the memory layer. Accordingly, a memory element can be formed simply. In addition, efficiency in the use of materials can be improved and yield is also improved, so that the memory element can be provided at low cost.

主权项

1. A semiconductor device comprising a memory element comprising:
a first conductive layer over an insulating surface; a second conductive layer over the first conductive layer; and a memory layer interposed between the first conductive layer and the second conductive layer, wherein the memory layer comprises nanoparticles each of which is coated with an organic thin film, wherein the nanoparticles comprise a conductive material, wherein the organic thin film comprises a surfactant, and wherein the memory element is configured to be written a data by being applied a write voltage to break at least a part of the organic thin film so that at least a part of the nanoparticles contact with each other.