Thin film transistor substrate, method for producing same, and display device

摘要

Disclosed is an active matrix substrate (20a) that includes: an insulating substrate (10a); a first thin film transistor (5a) that is formed on the insulating substrate (10a) and that includes a first oxide semiconductor layer (13a) having a first channel region (Ca); a second thin film transistor (5b) that is formed on the insulating substrate (10a) and that includes a second oxide semiconductor layer (13b) having a second channel region (Cb); and an interlayer insulating film (17) that covers the first oxide semiconductor layer (13a) and the second oxide semiconductor layer (13b). A channel protective film (25), which is formed of a material different from that of the interlayer insulating film (17), is provided between the second oxide semiconductor layer (13b) and the interlayer insulating film (17) on the second channel region (Cb) in the second oxide semiconductor layer (13b).

主权项

1. A thin-film transistor substrate, comprising:
an insulating substrate; a first thin-film transistor disposed on the insulating substrate, the first thin-film transistor being provided with a first semiconductor layer having a first channel region; a second thin-film transistor disposed on the insulating substrate, the second thin-film transistor being provided with a second semiconductor layer having a second channel region; a first insulating film that covers the first semiconductor layer and the second semiconductor layer; and a second insulating film formed of a material different from that of the first insulting film, the second insulating film being disposed on the second channel region in the second semiconductor layer so as to be sandwiched between the second semiconductor layer and the first insulating film.